
Toshiba Semiconductor and Storage
XK1R9F10QB,LXGQ
XK1R9F10QB,LXGQ ECAD Model
XK1R9F10QB,LXGQ Attributes
Type | Description | Select |
---|---|---|
Series | U-MOSX-H | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100 V | |
Current - Continuous Drain (Id) @ 25°C | 160A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 1.92mOhm @ 80A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 184 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 11500 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 375W (Tc) | |
Operating Temperature | 175°C | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-220SM(W) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
XK1R9F10QB,LXGQ Overview
Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the XK1R9F10QB,LXGQ. This component can be purchased from FMALL, a reputable supplier of electronic components.
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46,190 In Stock






Pricing (USD)
QTY | Unit Price | Ext Price |
---|---|---|
1+ | $4.3083 | $4.3083 |
10+ | $4.2620 | $42.6199 |
100+ | $4.0304 | $403.0362 |
1000+ | $3.7987 | $1,899.3660 |
10000+ | $3.4745 | $3,474.4500 |
The price is for reference only, please refer to the actual quotation! |