XK1R9F10QB,LXGQ
XK1R9F10QB,LXGQ
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Toshiba Semiconductor and Storage

XK1R9F10QB,LXGQ


XK1R9F10QB,LXGQ
F10256-XK1R9F10QB,LXGQ
Active
MOSFET N-CH 100V 160A TO220SM
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

XK1R9F10QB,LXGQ ECAD Model


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XK1R9F10QB,LXGQ Attributes


Type Description Select
Series U-MOSX-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 160A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.92mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 184 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11500 pF @ 10 V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature 175°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-220SM(W)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

XK1R9F10QB,LXGQ Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the XK1R9F10QB,LXGQ. This component can be purchased from FMALL, a reputable supplier of electronic components.

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46,190 In Stock


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Unit Price: $4.6326
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $4.3083 $4.3083
10+ $4.2620 $42.6199
100+ $4.0304 $403.0362
1000+ $3.7987 $1,899.3660
10000+ $3.4745 $3,474.4500
The price is for reference only, please refer to the actual quotation!

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