TK20G60W,RVQ
TK20G60W,RVQ
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Toshiba Semiconductor and Storage

TK20G60W,RVQ


TK20G60W,RVQ
F10256-TK20G60W,RVQ
Active
MOSFET N CH 600V 20A D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

TK20G60W,RVQ ECAD Model


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TK20G60W,RVQ Attributes


Type Description Select
Series DTMOSIV
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 155mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 300 V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

TK20G60W,RVQ Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK20G60W,RVQ. This component can be purchased from FMALL, a reputable supplier of electronic components.

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21,180 In Stock


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Unit Price: $3.1869
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $2.9638 $2.9638
10+ $2.9319 $29.3195
100+ $2.7726 $277.2603
1000+ $2.6133 $1,306.6290
10000+ $2.3902 $2,390.1750
The price is for reference only, please refer to the actual quotation!

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