Toshiba Semiconductor and Storage
TK65G10N1,RQ
TK65G10N1,RQ ECAD Model
TK65G10N1,RQ Attributes
| Type | Description | Select |
|---|---|---|
| Series | U-MOSVIII-H | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 65A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 32.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 156W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D2PAK | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
TK65G10N1,RQ Overview
Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK65G10N1,RQ. This component can be purchased from FMALL, a reputable supplier of electronic components.
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6,850 In Stock
Pricing (USD)
| QTY | Unit Price | Ext Price |
|---|---|---|
| 1+ | $2.8685 | $2.8685 |
| 10+ | $2.8376 | $28.3765 |
| 100+ | $2.6834 | $268.3428 |
| 1000+ | $2.5292 | $1,264.6040 |
| 10000+ | $2.3133 | $2,313.3000 |
| The price is for reference only, please refer to the actual quotation! | ||