TK60F10N1L,LXGQ
TK60F10N1L,LXGQ
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Toshiba Semiconductor and Storage

TK60F10N1L,LXGQ


TK60F10N1L,LXGQ
F10256-TK60F10N1L,LXGQ
Active
MOSFET N-CH 100V 60A TO220SM
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

TK60F10N1L,LXGQ ECAD Model


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TK60F10N1L,LXGQ Attributes


Type Description Select
Series U-MOSVIII-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 6.11mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4320 pF @ 10 V
FET Feature -
Power Dissipation (Max) 205W (Tc)
Operating Temperature 175°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-220SM(W)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

TK60F10N1L,LXGQ Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK60F10N1L,LXGQ. This component can be purchased from FMALL, a reputable supplier of electronic components.

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38,660 In Stock


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Unit Price: $2.4823
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $2.3085 $2.3085
10+ $2.2837 $22.8372
100+ $2.1596 $215.9601
1000+ $2.0355 $1,017.7430
10000+ $1.8617 $1,861.7250
The price is for reference only, please refer to the actual quotation!

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