TRS12V65H,LQ
TRS12V65H,LQ
Image shown is a representation only, Exact specifications should be obtained from the product data sheet.
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Toshiba Semiconductor and Storage

TRS12V65H,LQ


TRS12V65H,LQ
F10256-TRS12V65H,LQ
Active
G3 SIC-SBD 650V 12A DFN8X8
4-VSFN Exposed Pad

TRS12V65H,LQ ECAD Model


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TRS12V65H,LQ Attributes


Type Description Select
Series -
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 12A
Voltage - Forward (Vf) (Max) @ If 1.35 V @ 12 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 120 µA @ 650 V
Capacitance @ Vr, F 778pF @ 1V, 1MHz
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 4-VSFN Exposed Pad
Supplier Device Package 4-DFN-EP (8x8)
Operating Temperature - Junction 175°C

TRS12V65H,LQ Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TRS12V65H,LQ. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

12,050 In Stock


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Unit Price: $4.3758
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $4.0695 $4.0695
10+ $4.0257 $40.2574
100+ $3.8069 $380.6946
1000+ $3.5882 $1,794.0780
10000+ $3.2819 $3,281.8500
The price is for reference only, please refer to the actual quotation!

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