TK20V60W,LVQ
TK20V60W,LVQ
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Toshiba Semiconductor and Storage

TK20V60W,LVQ


TK20V60W,LVQ
F10256-TK20V60W,LVQ
Active
MOSFET N-CH 600V 20A 4DFN
4-VSFN Exposed Pad

TK20V60W,LVQ ECAD Model


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TK20V60W,LVQ Attributes


Type Description Select
Series DTMOSIV
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 300 V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 4-DFN-EP (8x8)
Package / Case 4-VSFN Exposed Pad

TK20V60W,LVQ Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK20V60W,LVQ. This component can be purchased from FMALL, a reputable supplier of electronic components.

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21,260 In Stock


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Unit Price: $2.0267
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $1.8848 $1.8848
10+ $1.8646 $18.6456
100+ $1.7632 $176.3229
1000+ $1.6619 $830.9470
10000+ $1.5200 $1,520.0250
The price is for reference only, please refer to the actual quotation!

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