TPWR6003PL,L1Q
TPWR6003PL,L1Q
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Toshiba Semiconductor and Storage

TPWR6003PL,L1Q


TPWR6003PL,L1Q
F10256-TPWR6003PL,L1Q
Active
MOSFET N-CH 30V 150A 8DSOP
8-PowerWDFN

TPWR6003PL,L1Q ECAD Model


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TPWR6003PL,L1Q Attributes


Type Description Select
Series U-MOSIX-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10000 pF @ 15 V
FET Feature -
Power Dissipation (Max) 960mW (Ta), 170W (Tc)
Operating Temperature 175°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-DSOP Advance
Package / Case 8-PowerWDFN

TPWR6003PL,L1Q Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPWR6003PL,L1Q. This component can be purchased from FMALL, a reputable supplier of electronic components.

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40,840 In Stock


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Unit Price: $3.64
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Pricing (USD)

QTY Unit Price Ext Price
1+ $3.3852 $3.3852
10+ $3.3488 $33.4880
100+ $3.1668 $316.6800
1000+ $2.9848 $1,492.4000
10000+ $2.7300 $2,730.0000
The price is for reference only, please refer to the actual quotation!

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