TPW4R008NH,L1Q
TPW4R008NH,L1Q
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Toshiba Semiconductor and Storage

TPW4R008NH,L1Q


TPW4R008NH,L1Q
F10256-TPW4R008NH,L1Q
Active
MOSFET N-CH 80V 116A 8DSOP
8-PowerWDFN

TPW4R008NH,L1Q ECAD Model


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TPW4R008NH,L1Q Attributes


Type Description Select
Series U-MOSVIII-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 40 V
FET Feature -
Power Dissipation (Max) 800mW (Ta), 142W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-DSOP Advance
Package / Case 8-PowerWDFN

TPW4R008NH,L1Q Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPW4R008NH,L1Q. This component can be purchased from FMALL, a reputable supplier of electronic components.

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15,280 In Stock


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Unit Price: $3.0869
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Pricing (USD)

QTY Unit Price Ext Price
1+ $2.8708 $2.8708
10+ $2.8399 $28.3995
100+ $2.6856 $268.5603
1000+ $2.5313 $1,265.6290
10000+ $2.3152 $2,315.1750
The price is for reference only, please refer to the actual quotation!

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