
Toshiba Semiconductor and Storage
TPW4R008NH,L1Q
TPW4R008NH,L1Q ECAD Model
TPW4R008NH,L1Q Attributes
Type | Description | Select |
---|---|---|
Series | U-MOSVIII-H | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 80 V | |
Current - Continuous Drain (Id) @ 25°C | 116A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 4mOhm @ 50A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 40 V | |
FET Feature | - | |
Power Dissipation (Max) | 800mW (Ta), 142W (Tc) | |
Operating Temperature | 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-DSOP Advance | |
Package / Case | 8-PowerWDFN |
TPW4R008NH,L1Q Overview
Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPW4R008NH,L1Q. This component can be purchased from FMALL, a reputable supplier of electronic components.
The product page for the TPW4R008NH,L1Q provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.
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Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.
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15,280 In Stock






Pricing (USD)
QTY | Unit Price | Ext Price |
---|---|---|
1+ | $2.8708 | $2.8708 |
10+ | $2.8399 | $28.3995 |
100+ | $2.6856 | $268.5603 |
1000+ | $2.5313 | $1,265.6290 |
10000+ | $2.3152 | $2,315.1750 |
The price is for reference only, please refer to the actual quotation! |