Toshiba Semiconductor and Storage
TPW2900ENH,L1Q
TPW2900ENH,L1Q ECAD Model
TPW2900ENH,L1Q Attributes
| Type | Description | Select |
|---|---|---|
| Series | U-MOSVIII-H | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 200 V | |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 16.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 100 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 800mW (Ta), 142W (Tc) | |
| Operating Temperature | 150°C | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-DSOP Advance | |
| Package / Case | 8-PowerWDFN |
TPW2900ENH,L1Q Overview
Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPW2900ENH,L1Q. This component can be purchased from FMALL, a reputable supplier of electronic components.
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23,570 In Stock
Pricing (USD)
| QTY | Unit Price | Ext Price |
|---|---|---|
| 1+ | $3.0656 | $3.0656 |
| 10+ | $3.0326 | $30.3260 |
| 100+ | $2.8678 | $286.7781 |
| 1000+ | $2.7030 | $1,351.4830 |
| 10000+ | $2.4722 | $2,472.2250 |
| The price is for reference only, please refer to the actual quotation! | ||