TPW2R508NH,L1Q
TPW2R508NH,L1Q
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Toshiba Semiconductor and Storage

TPW2R508NH,L1Q


TPW2R508NH,L1Q
F10256-TPW2R508NH,L1Q
Active
PB-F POWER MOSFET TRANSISTOR DOS
8-PowerWDFN

TPW2R508NH,L1Q ECAD Model


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TPW2R508NH,L1Q Attributes


Type Description Select
Series U-MOSVIII-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 150A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 37.5 V
FET Feature -
Power Dissipation (Max) 800mW (Ta), 142W (Tc)
Operating Temperature 150°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-DSOP Advance
Package / Case 8-PowerWDFN

TPW2R508NH,L1Q Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TPW2R508NH,L1Q. This component can be purchased from FMALL, a reputable supplier of electronic components.

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18,320 In Stock


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Unit Price: $0.7757
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Pricing (USD)

QTY Unit Price Ext Price
1+ $0.7214 $0.7214
10+ $0.7136 $7.1364
100+ $0.6749 $67.4859
1000+ $0.6361 $318.0370
10000+ $0.5818 $581.7750
The price is for reference only, please refer to the actual quotation!

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