TK31V60X,LQ
TK31V60X,LQ
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Toshiba Semiconductor and Storage

TK31V60X,LQ


TK31V60X,LQ
F10256-TK31V60X,LQ
Active
MOSFET N-CH 600V 30.8A 4DFN
4-VSFN Exposed Pad

TK31V60X,LQ ECAD Model


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TK31V60X,LQ Attributes


Type Description Select
Series DTMOSIV-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 98mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
FET Feature -
Power Dissipation (Max) 240W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 4-DFN-EP (8x8)
Package / Case 4-VSFN Exposed Pad

TK31V60X,LQ Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK31V60X,LQ. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

10,220 In Stock


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Unit Price: $6.6083
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $6.1457 $6.1457
10+ $6.0796 $60.7964
100+ $5.7492 $574.9221
1000+ $5.4188 $2,709.4030
10000+ $4.9562 $4,956.2250
The price is for reference only, please refer to the actual quotation!

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