TK170V65Z,LQ
TK170V65Z,LQ
Image shown is a representation only, Exact specifications should be obtained from the product data sheet.
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Toshiba Semiconductor and Storage

TK170V65Z,LQ


TK170V65Z,LQ
F10256-TK170V65Z,LQ
Active
MOSFET N-CH 650V 18A 5DFN
4-VSFN Exposed Pad

TK170V65Z,LQ ECAD Model


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TK170V65Z,LQ Attributes


Type Description Select
Series DTMOSVI
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 730µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1635 pF @ 300 V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature 150°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 4-DFN-EP (8x8)
Package / Case 4-VSFN Exposed Pad

TK170V65Z,LQ Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK170V65Z,LQ. This component can be purchased from FMALL, a reputable supplier of electronic components.

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9,300 In Stock


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Unit Price: $4.3677
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $4.0620 $4.0620
10+ $4.0183 $40.1828
100+ $3.7999 $379.9899
1000+ $3.5815 $1,790.7570
10000+ $3.2758 $3,275.7750
The price is for reference only, please refer to the actual quotation!

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