SCTH70N120G2V-7
SCTH70N120G2V-7
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STMicroelectronics

SCTH70N120G2V-7


SCTH70N120G2V-7
F2455-SCTH70N120G2V-7
Active
SILICON CARBIDE POWER MOSFET 120
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

SCTH70N120G2V-7 ECAD Model


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SCTH70N120G2V-7 Attributes


Type Description Select
Series -
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3540 pF @ 800 V
FET Feature -
Power Dissipation (Max) 469W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package H2PAK-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

SCTH70N120G2V-7 Overview


STMicroelectronics offers a wide range of electronic components for various applications, and one such component is the SCTH70N120G2V-7. This component can be purchased from FMALL, a reputable supplier of electronic components.

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15,250 In Stock


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Unit Price: $46.2846
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $43.0447 $43.0447
10+ $42.5818 $425.8183
100+ $40.2676 $4,026.7602
1000+ $37.9534 $18,976.6860
10000+ $34.7135 $34,713.4500
The price is for reference only, please refer to the actual quotation!

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