SCTH60N120G2-7
SCTH60N120G2-7
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STMicroelectronics

SCTH60N120G2-7


SCTH60N120G2-7
F2455-SCTH60N120G2-7
Active
SICFET N-CH 1200V 60A H2PAK-7
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

SCTH60N120G2-7 ECAD Model


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SCTH60N120G2-7 Attributes


Type Description Select
Series -
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 52mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 94 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1969 pF @ 800 V
FET Feature -
Power Dissipation (Max) 390W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package H2PAK-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

SCTH60N120G2-7 Overview


STMicroelectronics offers a wide range of electronic components for various applications, and one such component is the SCTH60N120G2-7. This component can be purchased from FMALL, a reputable supplier of electronic components.

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16,900 In Stock


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Unit Price: $16.1402
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $15.0104 $15.0104
10+ $14.8490 $148.4898
100+ $14.0420 $1,404.1974
1000+ $13.2350 $6,617.4820
10000+ $12.1052 $12,105.1500
The price is for reference only, please refer to the actual quotation!

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