SCTH35N65G2V-7
SCTH35N65G2V-7
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STMicroelectronics

SCTH35N65G2V-7


SCTH35N65G2V-7
F2455-SCTH35N65G2V-7
Active
SICFET N-CH 650V 45A H2PAK-7
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

SCTH35N65G2V-7 ECAD Model


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SCTH35N65G2V-7 Attributes


Type Description Select
Series -
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package H2PAK-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

SCTH35N65G2V-7 Overview


STMicroelectronics offers a wide range of electronic components for various applications, and one such component is the SCTH35N65G2V-7. This component can be purchased from FMALL, a reputable supplier of electronic components.

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42,350 In Stock


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Unit Price: $12.0267
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $11.1848 $11.1848
10+ $11.0646 $110.6456
100+ $10.4632 $1,046.3229
1000+ $9.8619 $4,930.9470
10000+ $9.0200 $9,020.0250
The price is for reference only, please refer to the actual quotation!

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