NXP USA Inc
PSMN8R5-108ESQ
PSMN8R5-108ESQ ECAD Model
PSMN8R5-108ESQ Attributes
| Type | Description | Select |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 108 V | |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tj) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 25A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 5512 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 263W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | I2PAK | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
PSMN8R5-108ESQ Overview
NXP USA Inc offers a wide range of electronic components for various applications, and one such component is the PSMN8R5-108ESQ. This component can be purchased from FMALL, a reputable supplier of electronic components.
The product page for the PSMN8R5-108ESQ provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.
If you're looking for comprehensive data on the PSMN8R5-108ESQ to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.
NXP USA Inc is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.
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8,090 In Stock
Pricing (USD)
| QTY | Unit Price | Ext Price |
|---|---|---|
| No reference price found. | ||