BUK9E6R1-100E,127
BUK9E6R1-100E,127
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NXP USA Inc

BUK9E6R1-100E,127


BUK9E6R1-100E,127
F2461-BUK9E6R1-100E,127
Active
MOSFET N-CH 100V 120A I2PAK
TO-262-3 Long Leads, I²Pak, TO-262AA

BUK9E6R1-100E,127 ECAD Model


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BUK9E6R1-100E,127 Attributes


Type Description Select
Series TrenchMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 5.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 133 nC @ 5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 17460 pF @ 25 V
FET Feature -
Power Dissipation (Max) 349W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

BUK9E6R1-100E,127 Datasheet Download


BUK9E6R1-100E,127 Overview


NXP USA Inc offers a wide range of electronic components for various applications, and one such component is the BUK9E6R1-100E,127. This component can be purchased from FMALL, a reputable supplier of electronic components.

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4,750 In Stock


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Unit Price: $1.08
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Pricing (USD)

QTY Unit Price Ext Price
1+ $1.0044 $1.0044
10+ $0.9936 $9.9360
100+ $0.9396 $93.9600
1000+ $0.8856 $442.8000
10000+ $0.8100 $810.0000
The price is for reference only, please refer to the actual quotation!

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