Toshiba Semiconductor and Storage
TW070J120B,S1Q
TW070J120B,S1Q ECAD Model
TW070J120B,S1Q Attributes
| Type | Description | Select |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 18A, 20V | |
| Vgs(th) (Max) @ Id | 5.8V @ 20mA | |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 20 V | |
| Vgs (Max) | ±25V, -10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 800 V | |
| FET Feature | Standard | |
| Power Dissipation (Max) | 272W (Tc) | |
| Operating Temperature | -55°C ~ 175°C | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-3P(N) | |
| Package / Case | TO-3P-3, SC-65-3 |
TW070J120B,S1Q Overview
Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TW070J120B,S1Q. This component can be purchased from FMALL, a reputable supplier of electronic components.
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Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.
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40,290 In Stock
Pricing (USD)
| QTY | Unit Price | Ext Price |
|---|---|---|
| 1+ | $59.6639 | $59.6639 |
| 10+ | $59.0223 | $590.2232 |
| 100+ | $55.8146 | $5,581.4589 |
| 1000+ | $52.6069 | $26,303.4270 |
| 10000+ | $48.1160 | $48,116.0250 |
| The price is for reference only, please refer to the actual quotation! | ||