Toshiba Semiconductor and Storage
TK12J60W,S1VE(S
TK12J60W,S1VE(S ECAD Model
TK12J60W,S1VE(S Attributes
| Type | Description | Select |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600 V | |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.8A, 10V | |
| Vgs(th) (Max) @ Id | 3.7V @ 600µA | |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 300 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 110W (Tc) | |
| Operating Temperature | 150°C | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-3P(N) | |
| Package / Case | TO-3P-3, SC-65-3 |
TK12J60W,S1VE(S Overview
Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK12J60W,S1VE(S. This component can be purchased from FMALL, a reputable supplier of electronic components.
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38,130 In Stock
Pricing (USD)
| QTY | Unit Price | Ext Price |
|---|---|---|
| No reference price found. | ||