Toshiba Semiconductor and Storage
TW030N120C,S1F
TW030N120C,S1F ECAD Model
TW030N120C,S1F Attributes
| Type | Description | Select |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 30A, 18V | |
| Vgs(th) (Max) @ Id | 5V @ 13mA | |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 18 V | |
| Vgs (Max) | +25V, -10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2925 pF @ 800 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 249W (Tc) | |
| Operating Temperature | 175°C | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247 | |
| Package / Case | TO-247-3 |
TW030N120C,S1F Overview
Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TW030N120C,S1F. This component can be purchased from FMALL, a reputable supplier of electronic components.
The product page for the TW030N120C,S1F provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.
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Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.
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36,720 In Stock
Pricing (USD)
| QTY | Unit Price | Ext Price |
|---|---|---|
| 1+ | $63.3971 | $63.3971 |
| 10+ | $62.7154 | $627.1539 |
| 100+ | $59.3069 | $5,930.6943 |
| 1000+ | $55.8985 | $27,949.2490 |
| 10000+ | $51.1267 | $51,126.6750 |
| The price is for reference only, please refer to the actual quotation! | ||