TK35N65W,S1F
TK35N65W,S1F
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Toshiba Semiconductor and Storage

TK35N65W,S1F


TK35N65W,S1F
F10256-TK35N65W,S1F
Active
MOSFET N-CH 650V 35A TO247
TO-247-3

TK35N65W,S1F ECAD Model


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TK35N65W,S1F Attributes


Type Description Select
Series DTMOSIV
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 2.1mA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 300 V
FET Feature -
Power Dissipation (Max) 270W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3

TK35N65W,S1F Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK35N65W,S1F. This component can be purchased from FMALL, a reputable supplier of electronic components.

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28,490 In Stock


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Unit Price: $10.6404
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $9.8956 $9.8956
10+ $9.7892 $97.8917
100+ $9.2571 $925.7148
1000+ $8.7251 $4,362.5640
10000+ $7.9803 $7,980.3000
The price is for reference only, please refer to the actual quotation!

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