
Toshiba Semiconductor and Storage
TW015N65C,S1F
TW015N65C,S1F ECAD Model
TW015N65C,S1F Attributes
Type | Description | Select |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | SiCFET (Silicon Carbide) | |
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 18V | |
Rds On (Max) @ Id, Vgs | 21mOhm @ 50A, 18V | |
Vgs(th) (Max) @ Id | 5V @ 11.7mA | |
Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 18 V | |
Vgs (Max) | +25V, -10V | |
Input Capacitance (Ciss) (Max) @ Vds | 4850 pF @ 400 V | |
FET Feature | - | |
Power Dissipation (Max) | 342W (Tc) | |
Operating Temperature | 175°C | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247 | |
Package / Case | TO-247-3 |
TW015N65C,S1F Overview
Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TW015N65C,S1F. This component can be purchased from FMALL, a reputable supplier of electronic components.
The product page for the TW015N65C,S1F provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.
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Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.
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43,900 In Stock






Pricing (USD)
QTY | Unit Price | Ext Price |
---|---|---|
1+ | $102.6778 | $102.6778 |
10+ | $101.5737 | $1,015.7370 |
100+ | $96.0534 | $9,605.3394 |
1000+ | $90.5331 | $45,266.5420 |
10000+ | $82.8047 | $82,804.6500 |
The price is for reference only, please refer to the actual quotation! |