TW015N65C,S1F
TW015N65C,S1F
Image shown is a representation only, Exact specifications should be obtained from the product data sheet.
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Toshiba Semiconductor and Storage

TW015N65C,S1F


TW015N65C,S1F
F10256-TW015N65C,S1F
Active
G3 650V SIC-MOSFET TO-247 15MOH
TO-247-3

TW015N65C,S1F ECAD Model


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TW015N65C,S1F Attributes


Type Description Select
Series -
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 21mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 5V @ 11.7mA
Gate Charge (Qg) (Max) @ Vgs 128 nC @ 18 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 4850 pF @ 400 V
FET Feature -
Power Dissipation (Max) 342W (Tc)
Operating Temperature 175°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3

TW015N65C,S1F Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TW015N65C,S1F. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

43,900 In Stock


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Unit Price: $110.4062
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $102.6778 $102.6778
10+ $101.5737 $1,015.7370
100+ $96.0534 $9,605.3394
1000+ $90.5331 $45,266.5420
10000+ $82.8047 $82,804.6500
The price is for reference only, please refer to the actual quotation!

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