Toshiba Semiconductor and Storage
TPC8092,LQ(S
TPC8092,LQ(S ECAD Model
TPC8092,LQ(S Attributes
| Type | Description | Select |
|---|---|---|
| Series | U-MOSVII | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 7.5A, 10V | |
| Vgs(th) (Max) @ Id | 2.3V @ 200µA | |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1W (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SOP | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
TPC8092,LQ(S Datasheet Download
TPC8092,LQ(S Overview
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