TK9J90E,S1E
TK9J90E,S1E
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Toshiba Semiconductor and Storage

TK9J90E,S1E


TK9J90E,S1E
F10256-TK9J90E,S1E
Active
MOSFET N-CH 900V 9A TO3P
TO-3P-3, SC-65-3

TK9J90E,S1E ECAD Model


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TK9J90E,S1E Attributes


Type Description Select
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3

TK9J90E,S1E Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK9J90E,S1E. This component can be purchased from FMALL, a reputable supplier of electronic components.

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40,170 In Stock


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Unit Price: $1.8359
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $1.7074 $1.7074
10+ $1.6890 $16.8903
100+ $1.5972 $159.7233
1000+ $1.5054 $752.7190
10000+ $1.3769 $1,376.9250
The price is for reference only, please refer to the actual quotation!

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