TK7J90E,S1E
TK7J90E,S1E
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Toshiba Semiconductor and Storage

TK7J90E,S1E


TK7J90E,S1E
F10256-TK7J90E,S1E
Active
MOSFET N-CH 900V 7A TO3P
TO-3P-3, SC-65-3

TK7J90E,S1E ECAD Model


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TK7J90E,S1E Attributes


Type Description Select
Series π-MOSVIII
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3

TK7J90E,S1E Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK7J90E,S1E. This component can be purchased from FMALL, a reputable supplier of electronic components.

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47,600 In Stock


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Unit Price: $2.9806
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $2.7720 $2.7720
10+ $2.7422 $27.4215
100+ $2.5931 $259.3122
1000+ $2.4441 $1,222.0460
10000+ $2.2355 $2,235.4500
The price is for reference only, please refer to the actual quotation!

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