TK62N60X,S1F
TK62N60X,S1F
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Toshiba Semiconductor and Storage

TK62N60X,S1F


TK62N60X,S1F
F10256-TK62N60X,S1F
Active
MOSFET N-CH 600V 61.8A TO247
TO-247-3

TK62N60X,S1F ECAD Model


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TK62N60X,S1F Attributes


Type Description Select
Series DTMOSIV-H
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 61.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 3.5V @ 3.1mA
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 300 V
FET Feature -
Power Dissipation (Max) 400W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3

TK62N60X,S1F Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK62N60X,S1F. This component can be purchased from FMALL, a reputable supplier of electronic components.

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1,280 In Stock


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Unit Price: $8.1225
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Pricing (USD)

QTY Unit Price Ext Price
1+ $7.5539 $7.5539
10+ $7.4727 $74.7270
100+ $7.0666 $706.6575
1000+ $6.6605 $3,330.2250
10000+ $6.0919 $6,091.8750
The price is for reference only, please refer to the actual quotation!

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