TK49N65W,S1F
TK49N65W,S1F
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Toshiba Semiconductor and Storage

TK49N65W,S1F


TK49N65W,S1F
F10256-TK49N65W,S1F
Active
PB-F POWER MOSFET TRANSISTOR TO2
TO-247-3

TK49N65W,S1F ECAD Model


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TK49N65W,S1F Attributes


Type Description Select
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 49.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 24.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 300 V
FET Feature -
Power Dissipation (Max) 400W (Tc)
Operating Temperature 150°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3

TK49N65W,S1F Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK49N65W,S1F. This component can be purchased from FMALL, a reputable supplier of electronic components.

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5,430 In Stock


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Unit Price: $17.9166
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $16.6624 $16.6624
10+ $16.4833 $164.8327
100+ $15.5874 $1,558.7442
1000+ $14.6916 $7,345.8060
10000+ $13.4375 $13,437.4500
The price is for reference only, please refer to the actual quotation!

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