TK39N60W,S1VF
TK39N60W,S1VF
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Toshiba Semiconductor and Storage

TK39N60W,S1VF


TK39N60W,S1VF
F10256-TK39N60W,S1VF
Active
MOSFET N CH 600V 38.8A TO247
TO-247-3

TK39N60W,S1VF ECAD Model


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TK39N60W,S1VF Attributes


Type Description Select
Series DTMOSIV
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 300 V
FET Feature -
Power Dissipation (Max) 270W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3

TK39N60W,S1VF Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK39N60W,S1VF. This component can be purchased from FMALL, a reputable supplier of electronic components.

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48,090 In Stock


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Unit Price: $6.8285
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Pricing (USD)

QTY Unit Price Ext Price
1+ $6.3505 $6.3505
10+ $6.2822 $62.8222
100+ $5.9408 $594.0795
1000+ $5.5994 $2,799.6850
10000+ $5.1214 $5,121.3750
The price is for reference only, please refer to the actual quotation!

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