TK39J60W,S1VQ
TK39J60W,S1VQ
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Toshiba Semiconductor and Storage

TK39J60W,S1VQ


TK39J60W,S1VQ
F10256-TK39J60W,S1VQ
Active
MOSFET N-CH 600V 38.8A TO3P
TO-3P-3, SC-65-3

TK39J60W,S1VQ ECAD Model


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TK39J60W,S1VQ Attributes


Type Description Select
Series DTMOSIV
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 300 V
FET Feature -
Power Dissipation (Max) 270W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3

TK39J60W,S1VQ Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK39J60W,S1VQ. This component can be purchased from FMALL, a reputable supplier of electronic components.

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28,170 In Stock


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Unit Price: $15.4818
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $14.3981 $14.3981
10+ $14.2433 $142.4326
100+ $13.4692 $1,346.9166
1000+ $12.6951 $6,347.5380
10000+ $11.6114 $11,611.3500
The price is for reference only, please refer to the actual quotation!

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