Toshiba Semiconductor and Storage
TK12J60U(F)
TK12J60U(F) ECAD Model
TK12J60U(F) Attributes
| Type | Description | Select |
|---|---|---|
| Series | DTMOSII | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600 V | |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 6A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 144W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-3P(N) | |
| Package / Case | TO-3P-3, SC-65-3 |
TK12J60U(F) Datasheet Download
TK12J60U(F) Overview
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