TK10J80E,S1E
TK10J80E,S1E
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Toshiba Semiconductor and Storage

TK10J80E,S1E


TK10J80E,S1E
F10256-TK10J80E,S1E
Active
MOSFET N-CH 800V 10A TO3P
TO-3P-3, SC-65-3

TK10J80E,S1E ECAD Model


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TK10J80E,S1E Attributes


Type Description Select
Series π-MOSVIII
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3

TK10J80E,S1E Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK10J80E,S1E. This component can be purchased from FMALL, a reputable supplier of electronic components.

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14,200 In Stock


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Unit Price: $3.6565
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Pricing (USD)

QTY Unit Price Ext Price
1+ $3.4005 $3.4005
10+ $3.3640 $33.6398
100+ $3.1812 $318.1155
1000+ $2.9983 $1,499.1650
10000+ $2.7424 $2,742.3750
The price is for reference only, please refer to the actual quotation!

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