TK100L60W,VQ
TK100L60W,VQ
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Toshiba Semiconductor and Storage

TK100L60W,VQ


TK100L60W,VQ
F10256-TK100L60W,VQ
Active
MOSFET N-CH 600V 100A TO3P
TO-3PL

TK100L60W,VQ ECAD Model


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TK100L60W,VQ Attributes


Type Description Select
Series DTMOSIV
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 30 V
FET Feature -
Power Dissipation (Max) 797W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-3P(L)
Package / Case TO-3PL

TK100L60W,VQ Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the TK100L60W,VQ. This component can be purchased from FMALL, a reputable supplier of electronic components.

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Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

17,560 In Stock


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Unit Price: $68.8146
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $63.9976 $63.9976
10+ $63.3094 $633.0943
100+ $59.8687 $5,986.8702
1000+ $56.4280 $28,213.9860
10000+ $51.6110 $51,610.9500
The price is for reference only, please refer to the actual quotation!

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