Toshiba Semiconductor and Storage
SSM6N48FU,RF(D
SSM6N48FU,RF(D ECAD Model
SSM6N48FU,RF(D Attributes
| Type | Description | Select |
|---|---|---|
| Series | - | |
| Technology | MOSFET (Metal Oxide) | |
| Configuration | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate, 2.5V Drive | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) | |
| Rds On (Max) @ Id, Vgs | 3.2Ohm @ 10mA, 4V | |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 15.1pF @ 3V | |
| Power - Max | 300mW | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Supplier Device Package | US6 |
SSM6N48FU,RF(D Overview
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