
Toshiba Semiconductor and Storage
HN2D02FU,LF
HN2D02FU,LF ECAD Model
HN2D02FU,LF Attributes
Type | Description | Select |
---|---|---|
Series | - | |
Diode Configuration | 3 Independent | |
Technology | Standard | |
Voltage - DC Reverse (Vr) (Max) | 80 V | |
Current - Average Rectified (Io) (per Diode) | 80mA | |
Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA | |
Speed | Small Signal =< 200mA (Io), Any Speed | |
Reverse Recovery Time (trr) | 4 ns | |
Current - Reverse Leakage @ Vr | 500 nA @ 80 V | |
Operating Temperature - Junction | 125°C (Max) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Package / Case | 6-TSSOP, SC-88, SOT-363 | |
Supplier Device Package | US6 |
HN2D02FU,LF Overview
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