Toshiba Semiconductor and Storage
SSM6H19NU,LF
SSM6H19NU,LF ECAD Model
SSM6H19NU,LF Attributes
| Type | Description | Select |
|---|---|---|
| Series | U-MOSVII-H | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 40 V | |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V | |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 1A, 8V | |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 4.2 V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1W (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-UDFN (2x2) | |
| Package / Case | 6-UDFN Exposed Pad |
SSM6H19NU,LF Overview
Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the SSM6H19NU,LF. This component can be purchased from FMALL, a reputable supplier of electronic components.
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