
Toshiba Semiconductor and Storage
SSM5N16FU,LF
SSM5N16FU,LF ECAD Model
SSM5N16FU,LF Attributes
Type | Description | Select |
---|---|---|
Series | - | |
Technology | MOSFET (Metal Oxide) | |
Configuration | 2 N-Channel (Dual) | |
FET Feature | - | |
Drain to Source Voltage (Vdss) | 20V | |
Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) | |
Rds On (Max) @ Id, Vgs | 3Ohm @ 10mA, 4V | |
Vgs(th) (Max) @ Id | 1.1V @ 100µA | |
Gate Charge (Qg) (Max) @ Vgs | - | |
Input Capacitance (Ciss) (Max) @ Vds | 9.3pF @ 3V | |
Power - Max | 200mW (Ta) | |
Operating Temperature | 150°C | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Package / Case | 5-TSSOP, SC-70-5, SOT-353 | |
Supplier Device Package | USV |
SSM5N16FU,LF Overview
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