HN4K03JUTE85LF
HN4K03JUTE85LF
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Toshiba Semiconductor and Storage

HN4K03JUTE85LF


HN4K03JUTE85LF
F10256-HN4K03JUTE85LF
Active
MOSFET N-CH 20V 100MA USV
5-TSSOP, SC-70-5, SOT-353

HN4K03JUTE85LF ECAD Model


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HN4K03JUTE85LF Attributes


Type Description Select
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V
Rds On (Max) @ Id, Vgs 12Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) 10V
Input Capacitance (Ciss) (Max) @ Vds 8.5 pF @ 3 V
FET Feature -
Power Dissipation (Max) 200mW (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 5-SSOP
Package / Case 5-TSSOP, SC-70-5, SOT-353

HN4K03JUTE85LF Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the HN4K03JUTE85LF. This component can be purchased from FMALL, a reputable supplier of electronic components.

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