GT10J312(Q)
GT10J312(Q)
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Toshiba Semiconductor and Storage

GT10J312(Q)


GT10J312(Q)
F10256-GT10J312(Q)
Active
IGBT 600V 10A 60W TO220SM
TO-262-3 Long Leads, I²Pak, TO-262AA

GT10J312(Q) ECAD Model


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GT10J312(Q) Attributes


Type Description Select
Series -
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 10 A
Current - Collector Pulsed (Icm) 20 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 60 W
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C 400ns/400ns
Test Condition 300V, 10A, 100Ohm, 15V
Reverse Recovery Time (trr) 200 ns
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package -

GT10J312(Q) Datasheet Download


GT10J312(Q) Overview


Toshiba Semiconductor and Storage offers a wide range of electronic components for various applications, and one such component is the GT10J312(Q). This component can be purchased from FMALL, a reputable supplier of electronic components.

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Toshiba Semiconductor and Storage is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

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