Toshiba Semiconductor and Storage
2SJ681(Q)
2SJ681(Q) ECAD Model
2SJ681(Q) Attributes
| Type | Description | Select |
|---|---|---|
| Series | - | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V | |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 2.5A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 20W (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PW-MOLD2 | |
| Package / Case | TO-251-3 Stub Leads, IPak |
2SJ681(Q) Datasheet Download
2SJ681(Q) Overview
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