Texas Instruments
CSD16323Q3C
CSD16323Q3C ECAD Model
CSD16323Q3C Attributes
| Type | Description | Select |
|---|---|---|
| Series | NexFET™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 25 V | |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 60A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V | |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 24A, 8V | |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 4.5 V | |
| Vgs (Max) | +10V, -8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 12.5 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SON-EP (3x3) | |
| Package / Case | 8-PowerTDFN |
CSD16323Q3C Datasheet Download
CSD16323Q3C Overview
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10,420 In Stock
Pricing (USD)
| QTY | Unit Price | Ext Price |
|---|---|---|
| No reference price found. | ||