
onsemi
NVH4L022N120M3S
NVH4L022N120M3S ECAD Model
NVH4L022N120M3S Attributes
Type | Description | Select |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | SiCFET (Silicon Carbide) | |
Drain to Source Voltage (Vdss) | 1200 V | |
Current - Continuous Drain (Id) @ 25°C | 68A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 18V | |
Rds On (Max) @ Id, Vgs | 30mOhm @ 40A, 18V | |
Vgs(th) (Max) @ Id | 4.4V @ 20mA | |
Gate Charge (Qg) (Max) @ Vgs | 151 nC @ 18 V | |
Vgs (Max) | +22V, -10V | |
Input Capacitance (Ciss) (Max) @ Vds | 3175 pF @ 800 V | |
FET Feature | - | |
Power Dissipation (Max) | 352W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Grade | Automotive | |
Qualification | AEC-Q101 | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247-4L | |
Package / Case | TO-247-4 |
NVH4L022N120M3S Overview
onsemi offers a wide range of electronic components for various applications, and one such component is the NVH4L022N120M3S. This component can be purchased from FMALL, a reputable supplier of electronic components.
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45,000 In Stock






Pricing (USD)
QTY | Unit Price | Ext Price |
---|---|---|
1+ | $45.2769 | $45.2769 |
10+ | $44.7900 | $447.9002 |
100+ | $42.3558 | $4,235.5776 |
1000+ | $39.9215 | $19,960.7680 |
10000+ | $36.5136 | $36,513.6000 |
The price is for reference only, please refer to the actual quotation! |