NTH4L028N170M1
NTH4L028N170M1
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NTH4L028N170M1


NTH4L028N170M1
F2454-NTH4L028N170M1
Active
SIC MOSFET 1700 V 28 MOHM M1 SER
TO-247-4

NTH4L028N170M1 ECAD Model


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NTH4L028N170M1 Attributes


Type Description Select
Series -
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 40mOhm @ 60A, 20V
Vgs(th) (Max) @ Id 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 20 V
Vgs (Max) +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 4230 pF @ 800 V
FET Feature -
Power Dissipation (Max) 535W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4

NTH4L028N170M1 Overview


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23,160 In Stock


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Unit Price: $33.712
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $31.3522 $31.3522
10+ $31.0150 $310.1504
100+ $29.3294 $2,932.9440
1000+ $27.6438 $13,821.9200
10000+ $25.2840 $25,284.0000
The price is for reference only, please refer to the actual quotation!

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