NTH4L060N065SC1
NTH4L060N065SC1
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NTH4L060N065SC1


NTH4L060N065SC1
F2454-NTH4L060N065SC1
Active
SIC MOS TO247-4L 650V
TO-247-4

NTH4L060N065SC1 ECAD Model


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NTH4L060N065SC1 Attributes


Type Description Select
Series -
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 70mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 4.3V @ 6.5mA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 18 V
Vgs (Max) +22V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1473 pF @ 325 V
FET Feature -
Power Dissipation (Max) 176W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4

NTH4L060N065SC1 Overview


onsemi offers a wide range of electronic components for various applications, and one such component is the NTH4L060N065SC1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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16,880 In Stock


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Unit Price: $11.5525
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $10.7438 $10.7438
10+ $10.6283 $106.2830
100+ $10.0507 $1,005.0675
1000+ $9.4731 $4,736.5250
10000+ $8.6644 $8,664.3750
The price is for reference only, please refer to the actual quotation!

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