NTH4L040N120M3S
NTH4L040N120M3S
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NTH4L040N120M3S


NTH4L040N120M3S
F2454-NTH4L040N120M3S
Active
SILICON CARBIDE (SIC) MOSFET ELI
TO-247-4

NTH4L040N120M3S ECAD Model


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NTH4L040N120M3S Attributes


Type Description Select
Series -
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 54mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 4.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 800 V
FET Feature -
Power Dissipation (Max) 231W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4

NTH4L040N120M3S Overview


onsemi offers a wide range of electronic components for various applications, and one such component is the NTH4L040N120M3S. This component can be purchased from FMALL, a reputable supplier of electronic components.

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23,480 In Stock


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Unit Price: $11.9965
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $11.1567 $11.1567
10+ $11.0368 $110.3678
100+ $10.4370 $1,043.6955
1000+ $9.8371 $4,918.5650
10000+ $8.9974 $8,997.3750
The price is for reference only, please refer to the actual quotation!

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