onsemi
NTH4L020N120SC1
NTH4L020N120SC1 ECAD Model
NTH4L020N120SC1 Attributes
| Type | Description | Select |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Current - Continuous Drain (Id) @ 25°C | 102A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 60A, 20V | |
| Vgs(th) (Max) @ Id | 4.3V @ 20mA | |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 20 V | |
| Vgs (Max) | +25V, -15V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2943 pF @ 800 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 510W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247-4L | |
| Package / Case | TO-247-4 |
NTH4L020N120SC1 Overview
onsemi offers a wide range of electronic components for various applications, and one such component is the NTH4L020N120SC1. This component can be purchased from FMALL, a reputable supplier of electronic components.
The product page for the NTH4L020N120SC1 provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.
If you're looking for comprehensive data on the NTH4L020N120SC1 to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.
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41,450 In Stock
Pricing (USD)
| QTY | Unit Price | Ext Price |
|---|---|---|
| 1+ | $30.7793 | $30.7793 |
| 10+ | $30.4483 | $304.4832 |
| 100+ | $28.7935 | $2,879.3520 |
| 1000+ | $27.1387 | $13,569.3600 |
| 10000+ | $24.8220 | $24,822.0000 |
| The price is for reference only, please refer to the actual quotation! | ||