PMFPB6545UP,115
PMFPB6545UP,115
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NXP USA Inc

PMFPB6545UP,115


PMFPB6545UP,115
F2461-PMFPB6545UP,115
Active
MOSFET P-CH 20V 3.5A DFN2020-6
6-UDFN Exposed Pad

PMFPB6545UP,115 ECAD Model


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PMFPB6545UP,115 Attributes


Type Description Select
Series -
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 70mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 520mW (Ta), 8.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 6-HUSON (2x2)
Package / Case 6-UDFN Exposed Pad

PMFPB6545UP,115 Overview


NXP USA Inc offers a wide range of electronic components for various applications, and one such component is the PMFPB6545UP,115. This component can be purchased from FMALL, a reputable supplier of electronic components.

The product page for the PMFPB6545UP,115 provides detailed information, including pricing, data sheets, available inventory, and technical challenges. It also offers quick access to a comparison list for finding interchangeable electronic parts.

If you're looking for comprehensive data on the PMFPB6545UP,115 to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

NXP USA Inc is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

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