NXP USA Inc
2N7000,126
2N7000,126 ECAD Model
2N7000,126 Attributes
| Type | Description | Select |
|---|---|---|
| Series | TrenchMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 830mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-92-3 | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
2N7000,126 Datasheet Download
2N7000,126 Overview
NXP USA Inc offers a wide range of electronic components for various applications, and one such component is the 2N7000,126. This component can be purchased from FMALL, a reputable supplier of electronic components.
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