IQDH29NE2LM5CGATMA1
IQDH29NE2LM5CGATMA1
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Infineon Technologies

IQDH29NE2LM5CGATMA1


IQDH29NE2LM5CGATMA1
F2465-IQDH29NE2LM5CGATMA1
Active
OPTIMOS 6 POWER-TRANSISTOR
9-PowerTDFN

IQDH29NE2LM5CGATMA1 ECAD Model


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IQDH29NE2LM5CGATMA1 Attributes


Type Description Select
Series OptiMOS™ 5
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 75A (Ta), 789A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.29mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 1.448mA
Gate Charge (Qg) (Max) @ Vgs 254 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 17000 pF @ 12 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 278W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TTFN-9-U02
Package / Case 9-PowerTDFN

IQDH29NE2LM5CGATMA1 Datasheet Download


IQDH29NE2LM5CGATMA1 Overview


Infineon Technologies offers a wide range of electronic components for various applications, and one such component is the IQDH29NE2LM5CGATMA1. This component can be purchased from FMALL, a reputable supplier of electronic components.

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If you're looking for comprehensive data on the IQDH29NE2LM5CGATMA1 to optimize your supply chain, including cross-references, life cycle, parameters, counterfeit risk, and obsolescence management predictions, please contact our technical support team.

Infineon Technologies is committed to providing high-quality electronic components that meet industry standards and exceed customer expectations. Whether you're a professional engineer or a hobbyist, you can trust us to provide reliable and efficient components for your electronic projects.

36,470 In Stock


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Unit Price: $4.9104
The price is for reference only.
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Pricing (USD)

QTY Unit Price Ext Price
1+ $4.5667 $4.5667
10+ $4.5176 $45.1757
100+ $4.2720 $427.2048
1000+ $4.0265 $2,013.2640
10000+ $3.6828 $3,682.8000
The price is for reference only, please refer to the actual quotation!

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