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ISPLSI5512VE-100LB272I

Lattice Semiconductor Corporation

ISPLSI5512VE-100LB272I

EE PLD, 10 ns, 512-Cell, CMOS, THERMALLY ENHANCED, BGA-272

3,800
ISPLSI5512VE-100LB272

Lattice Semiconductor Corporation

ISPLSI5512VE-100LB272

EE PLD, 10 ns, 512-Cell, CMOS, THERMALLY ENHANCED, BGA-272

3,910
ISPLSI5512VE-100LB388I

Lattice Semiconductor Corporation

ISPLSI5512VE-100LB388I

EE PLD, 10 ns, 512-Cell, CMOS, THERMALLY ENHANCED, BGA-388

4,617
ISPLSI5512VE-100LF388I

Lattice Semiconductor Corporation

ISPLSI5512VE-100LF388I

EE PLD, 10 ns, 512-Cell, CMOS, THERMALLY ENHANCED, FBGA-388

5,982
ISPLSI5512VE-100LF388

Lattice Semiconductor Corporation

ISPLSI5512VE-100LF388

EE PLD, 10 ns, 512-Cell, CMOS, THERMALLY ENHANCED, FBGA-388

4,830
ISPLSI5512VE-100LB388

Lattice Semiconductor Corporation

ISPLSI5512VE-100LB388

EE PLD, 10 ns, 512-Cell, CMOS, THERMALLY ENHANCED, BGA-388

2,544
ISPLSI5512VE-100LF256

Lattice Semiconductor Corporation

ISPLSI5512VE-100LF256

EE PLD, 10 ns, 512-Cell, CMOS, THERMALLY ENHANCED, FBGA-256

4,865
ISPLSI5512VE-100LF256I

Lattice Semiconductor Corporation

ISPLSI5512VE-100LF256I

EE PLD, 10 ns, 512-Cell, CMOS, THERMALLY ENHANCED, FBGA-256

2,548