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Lattice Semiconductor Corporation
ISPLSI5512VE-155LF256
EE PLD, 6.5 ns, 512-Cell, CMOS, THERMALLY ENHANCED, FBGA-256
Lattice Semiconductor Corporation
ISPLSI5512VE-80LF388I
EE PLD, 12 ns, 512-Cell, CMOS, THERMALLY ENHANCED, FBGA-388
Lattice Semiconductor Corporation
ISPLSI5512VE-80LB272I
EE PLD, 12 ns, 512-Cell, CMOS, THERMALLY ENHANCED, BGA-272
Lattice Semiconductor Corporation
ISPLSI5512VE-100LB272I
EE PLD, 10 ns, 512-Cell, CMOS, THERMALLY ENHANCED, BGA-272
Lattice Semiconductor Corporation
ISPLSI5512VE-125LB272
EE PLD, 7.5 ns, 512-Cell, CMOS, THERMALLY ENHANCED, BGA-272
Lattice Semiconductor Corporation
ISPLSI5512VE-125LF388I
EE PLD, 7.5 ns, 512-Cell, CMOS, THERMALLY ENHANCED, FBGA-388
Lattice Semiconductor Corporation
ISPLSI5512VE-155LB388
EE PLD, 6.5 ns, 512-Cell, CMOS, THERMALLY ENHANCED, BGA-388
Lattice Semiconductor Corporation
ISPLSI5512VE-155LB272
EE PLD, 6.5 ns, 512-Cell, CMOS, THERMALLY ENHANCED, BGA-272
Lattice Semiconductor Corporation
ISPLSI5512VE-100LB272
EE PLD, 10 ns, 512-Cell, CMOS, THERMALLY ENHANCED, BGA-272
Lattice Semiconductor Corporation
ISPLSI5512VE-125LB272I
EE PLD, 7.5 ns, 512-Cell, CMOS, THERMALLY ENHANCED, BGA-272
Lattice Semiconductor Corporation
ISPLSI5512VE-100LB388I
EE PLD, 10 ns, 512-Cell, CMOS, THERMALLY ENHANCED, BGA-388
Lattice Semiconductor Corporation
ISPLSI5512VE-125LB388
EE PLD, 7.5 ns, 512-Cell, CMOS, THERMALLY ENHANCED, BGA-388
Lattice Semiconductor Corporation
ISPLSI5512VE-100LF388I
EE PLD, 10 ns, 512-Cell, CMOS, THERMALLY ENHANCED, FBGA-388
Lattice Semiconductor Corporation
ISPLSI5512VE-100LF388
EE PLD, 10 ns, 512-Cell, CMOS, THERMALLY ENHANCED, FBGA-388
Lattice Semiconductor Corporation
ISPLSI5512VE-80LF256I
EE PLD, 12 ns, 512-Cell, CMOS, THERMALLY ENHANCED, FBGA-256